IGBT(Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite, fully controlled voltage-driven power semiconductor device consisting of BJT (bipolar tripolar tube) and MOS (insulated gate field effect tube), combining the advantages of MOSFET's high input impedance and GTR's low-on-voltage drop. GTR saturation pressure is reduced, the load density is large, but the driving current is large, the MOSFET drive power is very small, the switching speed is fast, but the on voltage drop is large and the load density is small. IGBT combines the advantages of the above two devices, driving power is small and saturation pressure is reduced. Ideal for applications in DC voltages of 600V and above in variable frequency systems such as AC motors, inverters, switching power supplies, lighting circuits, traction drives and other fields.
IGBT module is a modular semiconductor product packaged by IGBT (insulated gate bipolar transistor chip) and FWD (continuous flowdiode chip) bridged by a specific circuit;
IGBT module has the characteristics of energy saving, easy installation and maintenance, thermal stability and so on, the current market is mostly sold for such modular products, generally referred to as IGBT also refers to IGBT module, with energy conservation and environmental protection and other concepts, such products will be more and more seen in the market;
IGBT is the core device of energy transformation and transmission, commonly known as the "CPU" of power electronics, as a strategic emerging industry in the country, in rail transit, smart grid, aerospace, electric vehicles and new energy equipment and other fields are widely used.
ANSON ELECTRONICS (SHENZHEN) CO.,LTD
QQ：3002694949
Phone：0755-27200701
E-mail：xm@anbel-china.com
Addr：7/F, Building 5D, Skyworth innovation Park, Tangtou 1 Road, Shiyan Street,Bao’an District , ShenZhen.
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