Diodes are electronic devices made of semiconductor materials (silicon, selenium, palladium, etc.). It has a single wizard electrical performance, i.e. when the diode anode and cathode are added to the positive voltage, the diode is turned on. When the anode and cathode are added to the reverse voltage, the diode is cut off. Therefore, the on and off of the diode is equivalent to the switch on and off.
Diodes are one of the earliest semiconductor devices to be born, and they are widely used. Especially in a variety of electronic circuits, the use of diodes and resistors, capacitors, inductors and other components to make reasonable connections, forming different functions of the circuit, can achieve AC rectition, modulation signal detection, limits and clamps, as well as the voltage of the supply voltage and other functions .
The main principle of the diode is to use the single wizard electricality of the PN knot, and the lead and package on the PN knot become a diode.
A transistor is a PN knot formed by a P-type semiconductor and an N-type semiconductor, which forms a spatial charge layer on both sides of its interface and has a self-built electric field. When no adversity voltage exists, it is electrically balanced due to the diffusion current caused by the difference in the concentration of the carriers on both sides of the PN knot and the drift current caused by the self-built electric field.
When the outside world has a positive voltage bias, the mutual suppression of the external electric field and the self-built electric field causes the diffusion current of the carrier to increase and cause the positive current. When the outside world has reverse voltage bias, the external electric field and self-built electric field are further strengthened to form a reverse saturation current in a certain reverse voltage range independent of the reverse bias voltage value.
When the additional reverse voltage is high to a certain extent, the electric field strength in the PN-knot space charge layer reaches a critical value to produce the multiplies process of the carrier, resulting in a large number of electron hole pairs, resulting in a very large number of reverse knock-through current, called diode knock-through phenomenon. The reverse perforation of the PN knot is divided between Zener's breakout and avalanche's perforation.
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